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https://doi.org/10.1109/LED.2006.889233
| Title: | N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide | Authors: | Lee, R.T.P. Lim, A.E.-J. Tan, K.-M. Liow, T.-Y. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C. |
Keywords: | FinFET Multiple-gate transistor Rare earth metal Schottky Silicide YbSi |
Issue Date: | Feb-2007 | Citation: | Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2007-02). N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide. IEEE Electron Device Letters 28 (2) : 164-167. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.889233 | Abstract: | We have fabricated n-channel 25-nm gate length FinFETs with Schottky-barrier source and drain featuring a self-aligned ytterbium silicide (YbSi1.8). A low-temperature silicidation process was developed for the formation of the low electron barrier height YbSi1.8 phase, without reaction with SiO2 isolation or SiN spacer materials, enabling integration in a CMOS fabrication process flow. The fabricated device exhibits good device characteristics with a drive current of 241 μA/μ VDS = VGS Vt = 1 V, Ion/Ioff = 104 at VDS =1.1 subthreshold swing of 125 mV/ decade, and drain-induced barrier lowering of 0.26 V/V. © 2007 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82747 | ISSN: | 07413106 | DOI: | 10.1109/LED.2006.889233 |
| Appears in Collections: | Staff Publications |
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