Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.889233
Title: N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
Authors: Lee, R.T.P. 
Lim, A.E.-J.
Tan, K.-M.
Liow, T.-Y.
Lo, G.-Q.
Samudra, G.S. 
Chi, D.Z.
Yeo, Y.-C. 
Keywords: FinFET
Multiple-gate transistor
Rare earth metal
Schottky
Silicide YbSi
Issue Date: Feb-2007
Citation: Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2007-02). N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide. IEEE Electron Device Letters 28 (2) : 164-167. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.889233
Abstract: We have fabricated n-channel 25-nm gate length FinFETs with Schottky-barrier source and drain featuring a self-aligned ytterbium silicide (YbSi1.8). A low-temperature silicidation process was developed for the formation of the low electron barrier height YbSi1.8 phase, without reaction with SiO2 isolation or SiN spacer materials, enabling integration in a CMOS fabrication process flow. The fabricated device exhibits good device characteristics with a drive current of 241 μA/μ VDS = VGS Vt = 1 V, Ion/Ioff = 104 at VDS =1.1 subthreshold swing of 125 mV/ decade, and drain-induced barrier lowering of 0.26 V/V. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82747
ISSN: 07413106
DOI: 10.1109/LED.2006.889233
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