Please use this identifier to cite or link to this item: https://doi.org/10.1504/IJNT.2007.013975
Title: Nanoscale growth of (Zn,Sr)S system for electron-trapping optical memories
Authors: Teo, K.L. 
Chong, T.C.
Keywords: Electron trapping
Optical memories
SrS
ZnSrS
Issue Date: 2007
Source: Teo, K.L., Chong, T.C. (2007). Nanoscale growth of (Zn,Sr)S system for electron-trapping optical memories. International Journal of Nanotechnology 4 (4) : 412-423. ScholarBank@NUS Repository. https://doi.org/10.1504/IJNT.2007.013975
Abstract: In this work, we give a review on the nanoscale cubic-islands growth of SrS and ZnxSr1-xS [abbreviated as (ZnSr)S] thin films by solid-source molecular-beam epitaxy (MBE). Our detailed analyses of scanning electron microscopy (SEM) and atomic force microscopy (AFM) images show that different sizes of SrS islands can be achieved depending on the substrate temperature. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) establish cube-on-cube (001)SrS
(001) MgO with [001]SrS
[001]MgO epitaxial relationship. All these results point towards the growth to occur in step-flow mode. When (ZnSr)S is codoped with europium and samarium ions (SrS : Eu, Sm and ZnSrS : Eu, Sm), infrared-stimulated luminescence (ISL) with a peak at 612 nm is observed at room temperature, which is stimulated with infrared light after irradiation with visible light. The ISL results show that the (ZnSr)S system can be developed for erasable and rewritable optical memory. Copyright © 2007 Inderscience Enterprises Ltd.
Source Title: International Journal of Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/82741
ISSN: 14757435
DOI: 10.1504/IJNT.2007.013975
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