Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/82734
Title: Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation
Authors: Poon, C.H.
Cho, B.J. 
Lu, Y.F. 
Bhat, M.
See, A.
Issue Date: Mar-2003
Source: Poon, C.H.,Cho, B.J.,Lu, Y.F.,Bhat, M.,See, A. (2003-03). Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 706-709. ScholarBank@NUS Repository.
Abstract: The advantages of multiple-pulse laser annealing with a moderate energy fluence were demonstrated over single-pulse annealing with a high energy fluence on the formation of shallow p+/n junction. It was found that the laser fluence, adjusted to a value that could melt amorphous silicon layer but not crystalline silicon, could maintain the advantage of easy control of junction depth by controlling the preamorphized layer depth. The multiple-pulse laser annealing with a fluence was found to achieve a good degree of activation of boron without compromising the junction depth.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/82734
ISSN: 10711023
Appears in Collections:Staff Publications

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