Please use this identifier to cite or link to this item:
|Title:||Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation|
|Source:||Poon, C.H.,Cho, B.J.,Lu, Y.F.,Bhat, M.,See, A. (2003-03). Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 706-709. ScholarBank@NUS Repository.|
|Abstract:||The advantages of multiple-pulse laser annealing with a moderate energy fluence were demonstrated over single-pulse annealing with a high energy fluence on the formation of shallow p+/n junction. It was found that the laser fluence, adjusted to a value that could melt amorphous silicon layer but not crystalline silicon, could maintain the advantage of easy control of junction depth by controlling the preamorphized layer depth. The multiple-pulse laser annealing with a fluence was found to achieve a good degree of activation of boron without compromising the junction depth.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 14, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.