Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation

Abstract

The advantages of multiple-pulse laser annealing with a moderate energy fluence were demonstrated over single-pulse annealing with a high energy fluence on the formation of shallow p+/n junction. It was found that the laser fluence, adjusted to a value that could melt amorphous silicon layer but not crystalline silicon, could maintain the advantage of easy control of junction depth by controlling the preamorphized layer depth. The multiple-pulse laser annealing with a fluence was found to achieve a good degree of activation of boron without compromising the junction depth.