Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.014202jss
Title: Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts
Authors: Zhang, X.
Guo, H.X.
Gong, X.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Zhang, X., Guo, H.X., Gong, X., Yeo, Y.-C. (2012). Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts. ECS Journal of Solid State Science and Technology 1 (2) : P82-P85. ScholarBank@NUS Repository. https://doi.org/10.1149/2.014202jss
Abstract: Sub-100 nm multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts were demonstrated. The self-aligned Ni-InGaAs contacts were formed by using a salicide-like metallization process, which involves a reaction between Ni and In 0.53Ga0.47As and selective wet etching of unreacted Ni. Ni-InGaAs contacts formed on Si-doped n++ In0.53Ga 0.47As (5×1019 cm-3) source/drain show low contact resistance RC of 79 Ω·μm and sheet resistance Rsh of 43 Ω/square. With selfaligned Ni-InGaAs contacts formed on n++ In0.53Ga0.47As source and drain, the n-MOSFET exhibits low series resistance RSD of 364 Ω·μm, which is the lowest value reported for non-planar InGaAs MOSFETs to date. The multiple-gate n-MOSFET has a channel length of 50 nm and equivalent oxide thickness (EOT) of ~3 nm, and achieves a drive current of 411 μA/μm at VD of 0.7 V and VG of 0.7 V. The device also shows a peak extrinsic transconductance Gm of 590 μS/μm at V D of 0.5 V. © 2012 The Electrochemical Society. All rights reserved.
Source Title: ECS Journal of Solid State Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/82733
ISSN: 21628769
DOI: 10.1149/2.014202jss
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