Please use this identifier to cite or link to this item:
|Title:||Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts|
|Citation:||Zhang, X., Guo, H.X., Gong, X., Yeo, Y.-C. (2012). Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts. ECS Journal of Solid State Science and Technology 1 (2) : P82-P85. ScholarBank@NUS Repository. https://doi.org/10.1149/2.014202jss|
|Abstract:||Sub-100 nm multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts were demonstrated. The self-aligned Ni-InGaAs contacts were formed by using a salicide-like metallization process, which involves a reaction between Ni and In 0.53Ga0.47As and selective wet etching of unreacted Ni. Ni-InGaAs contacts formed on Si-doped n++ In0.53Ga 0.47As (5×1019 cm-3) source/drain show low contact resistance RC of 79 Ω·μm and sheet resistance Rsh of 43 Ω/square. With selfaligned Ni-InGaAs contacts formed on n++ In0.53Ga0.47As source and drain, the n-MOSFET exhibits low series resistance RSD of 364 Ω·μm, which is the lowest value reported for non-planar InGaAs MOSFETs to date. The multiple-gate n-MOSFET has a channel length of 50 nm and equivalent oxide thickness (EOT) of ~3 nm, and achieves a drive current of 411 μA/μm at VD of 0.7 V and VG of 0.7 V. The device also shows a peak extrinsic transconductance Gm of 590 μS/μm at V D of 0.5 V. © 2012 The Electrochemical Society. All rights reserved.|
|Source Title:||ECS Journal of Solid State Science and Technology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 17, 2019
WEB OF SCIENCETM
checked on Mar 6, 2019
checked on Mar 16, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.