Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.51.02BD08
Title: Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers
Authors: Gyanathan, A.
Yeo, Y.-C. 
Issue Date: Feb-2012
Citation: Gyanathan, A., Yeo, Y.-C. (2012-02). Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BD08
Abstract: This work compares the effects of SiN and Ta 2O 5 barrier layers in a multi-level phase change random access memory (PCRAM) cell. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogendoped Ge 2Sb 2Te 5 (NGST) layer on top of a thin barrier layer on an undoped GST layer. The thermal conductivity and electrical resistivity of the barrier layer affect multi-level switching performance in terms of endurance as well as power consumption. Extensive electrical characterization was performed on these PCRAM multi-level devices. Thermal analysis was also performed to investigate the thermal efficiency of each barrier layer. It was observed that for a constant barrier layer thickness of 1.5 nm, the endurance of the multi-level device with the SiN barrier layer was better than that with the Ta 2O 5 barrier layer; however, the multi-level device with the Ta 2O 5 barrier layer had a lower power consumption than that with the SiN barrier layer. © 2012 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82728
ISSN: 00214922
DOI: 10.1143/JJAP.51.02BD08
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