Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2002.807703
Title: MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
Authors: Hu, H.
Zhu, C. 
Yu, X.
Chin, A. 
Li, M.F. 
Cho, B.J. 
Kwong, D.-L.
Foo, P.D.
Yu, M.B.
Liu, X.
Winkler, J.
Keywords: Dispersion
High-κ
Metal-insulator-metal (MIM) capacitor
Thin-film devices
Voltage linearity
Issue Date: Feb-2003
Citation: Hu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J. (2003-02). MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics. IEEE Electron Device Letters 24 (2) : 60-62. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807703
Abstract: The metal-insulator-metal (MIM) capacitors with (HfO2)1-x(Al2O3)x high-κ dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing the mole fraction of Al2O3. It was demonstrated that the (HfO2)1-x(Al2O3)x MIM capacitor with a Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fFμm2) and low VCC values (∼ 140ppm/V2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are also obtained. Also, no electrical degradation was observed for (HfO2)1-x(Al2O3)x MIM capacitors after N2 annealing at 400 °C. All these show that the (HfO2)0.86(Al2O3)0.14 MIM capacitor is very suitable for the capacitor applications within the thermal budget of the back end of line process.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82701
ISSN: 07413106
DOI: 10.1109/LED.2002.807703
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