Please use this identifier to cite or link to this item:
|Title:||MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics|
Metal-insulator-metal (MIM) capacitor
|Citation:||Hu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J. (2003-02). MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics. IEEE Electron Device Letters 24 (2) : 60-62. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807703|
|Abstract:||The metal-insulator-metal (MIM) capacitors with (HfO2)1-x(Al2O3)x high-κ dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing the mole fraction of Al2O3. It was demonstrated that the (HfO2)1-x(Al2O3)x MIM capacitor with a Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fFμm2) and low VCC values (∼ 140ppm/V2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are also obtained. Also, no electrical degradation was observed for (HfO2)1-x(Al2O3)x MIM capacitors after N2 annealing at 400 °C. All these show that the (HfO2)0.86(Al2O3)0.14 MIM capacitor is very suitable for the capacitor applications within the thermal budget of the back end of line process.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 12, 2018
WEB OF SCIENCETM
checked on Sep 4, 2018
checked on Jun 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.