Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2357746
Title: Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications
Authors: Ding, S.-J.
Huang, Y.-J.
Li, Y.
Zhang, D.W.
Zhu, C. 
Li, M.-F. 
Issue Date: 2006
Source: Ding, S.-J., Huang, Y.-J., Li, Y., Zhang, D.W., Zhu, C., Li, M.-F. (2006). Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (6) : 2518-2522. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2357746
Abstract: High density metal-insulator-metal (MIM) capacitors are required for radio frequency and analog/mixed-signal integration circuit applications. In this article, high permittivity Al2 O3 Hf O2 Al2 O3 (AHA) dielectrics have been evaluated in comparison with Hf O2 using atomic layer deposition technique for MIM capacitor applications. The results indicate that the AHA dielectrics exhibit electrical performance superior to the Hf O2 dielectric while retaining similar capacitance density. With respect to 2 nm individual Al2 O3 barriers, the MIM capacitor can offer a capacitance density of 2.6 fFμ m2, voltage coefficients of capacitance of 71 ppm V2 and 9 ppmV, a leakage current as low as 3× 10-9 A cm2 at 1 MVcm and 125 °C, an operating voltage of around 3 V for a ten-year lifetime at 125 °C in terms of 50% failure. © 2006 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/82685
ISSN: 10711023
DOI: 10.1116/1.2357746
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