MBE growth and properties of Cr-doped ZnTe on GaAs(001)

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.10.024

Title:	MBE growth and properties of Cr-doped ZnTe on GaAs(001)
Authors:	Hou, X.J. Teo, K.L. Sreenivasan, M.G. Liew, T. Chong, T.C.
Keywords:	Curie temperature Diluted magnetic semiconductor MBE Zn 1-xCrxTe
Issue Date:	18-May-2006
Citation:	Hou, X.J., Teo, K.L., Sreenivasan, M.G., Liew, T., Chong, T.C. (2006-05-18). MBE growth and properties of Cr-doped ZnTe on GaAs(001). Thin Solid Films 505 (1-2) : 126-128. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.024
Abstract:	Cr-doped ZnTe diluted magnetic semiconductor thin films were grown on semi-insulating GaAs [001] substrates at low temperature by solid-source molecular-beam epitaxy. Zn1-xCrxTe samples with Cr concentrations x = 0.026 and x = 0.141 were prepared. The magnetization versus magnetic field (M-H) measurement showed a clear hysteresis loop at low temperature for these samples. For higher Cr doping with nominal Cr concentration of x > 0.18, we obtained a Curie temperature of 365 K; the highest reported so far for thin film sample. However, this strong ferromagnetic momentum could possibly be due to Cr1-δTe precipitate in the Cr-doped ZnTe system. © 2005 Elsevier B.V. All rights reserved.
Source Title:	Thin Solid Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/82672
ISSN:	00406090
DOI:	10.1016/j.tsf.2005.10.024
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check