Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.10.024
Title: MBE growth and properties of Cr-doped ZnTe on GaAs(001)
Authors: Hou, X.J.
Teo, K.L. 
Sreenivasan, M.G.
Liew, T. 
Chong, T.C. 
Keywords: Curie temperature
Diluted magnetic semiconductor
MBE
Zn 1-xCrxTe
Issue Date: 18-May-2006
Citation: Hou, X.J., Teo, K.L., Sreenivasan, M.G., Liew, T., Chong, T.C. (2006-05-18). MBE growth and properties of Cr-doped ZnTe on GaAs(001). Thin Solid Films 505 (1-2) : 126-128. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.024
Abstract: Cr-doped ZnTe diluted magnetic semiconductor thin films were grown on semi-insulating GaAs [001] substrates at low temperature by solid-source molecular-beam epitaxy. Zn1-xCrxTe samples with Cr concentrations x = 0.026 and x = 0.141 were prepared. The magnetization versus magnetic field (M-H) measurement showed a clear hysteresis loop at low temperature for these samples. For higher Cr doping with nominal Cr concentration of x > 0.18, we obtained a Curie temperature of 365 K; the highest reported so far for thin film sample. However, this strong ferromagnetic momentum could possibly be due to Cr1-δTe precipitate in the Cr-doped ZnTe system. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82672
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.10.024
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