Magnetoresistance behavior of single castellated Ni80Fe20 nanowires

Abstract

The systematic study of the magnetization reversal processes in single castellated Ni80Fe2 nanowires at room temperature is presented. The nanowire, of width in the range from 80 to 150 nm, bridges between two much wider (5 μm) Ni80Fe20 wires which provide electrical contact to the nanowire, are fabricated by electron beam lithography. As such, the results show that they demonstrate that the presence of domain walls in such a structure had a major impact on the switching processes in a magnetic nanowire, causing discontinuous switching in circumstance where one might otherwise expect continuous rotation.