Please use this identifier to cite or link to this item:
|Title:||Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide|
|Authors:||Wang, J. |
|Citation:||Wang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Tan, S.M.F., Yu, M.B., Lee, S.J., Lo, G.Q., Kwong, D.L. (2008-09). Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide. IEEE Photonics Technology Letters 20 (17) : 1485-1487. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2008.928087|
|Abstract:||This letter presents the device performance of scaled thin-film-Ge lateral PIN photodetectors integrated on a Si waveguide. The photodetectors are with closely spaced pn regions (0.8 μm) on a Ge region with short length (5-20 μm) and narrow width (2.4 μm). Though with a thin Ge layer (∼220 nm including bottom SiGe buffer), light is evanescent-coupled from the Si waveguide effectively to the overlying Ge detector. The device exhibits f3 db bandwidth of 18 GHz with external responsivity of 0.13 A/W for 1550 nm at -1 V. Considering the coupling loss and waveguide loss, the internal responsivity is as high as 0.65 A/W. It is shown that with increasing detector length, the devices' internal quantum efficiency can be improved to ∼90% and by suppressing parasitic effects, speed can be boosted further towards several tens of gigahertz. © 2008 IEEE.|
|Source Title:||IEEE Photonics Technology Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 19, 2018
checked on May 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.