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|Title:||Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide|
|Authors:||Wang, J. |
|Citation:||Wang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Tan, S.M.F., Yu, M.B., Lee, S.J., Lo, G.Q., Kwong, D.L. (2008-09). Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide. IEEE Photonics Technology Letters 20 (17) : 1485-1487. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2008.928087|
|Abstract:||This letter presents the device performance of scaled thin-film-Ge lateral PIN photodetectors integrated on a Si waveguide. The photodetectors are with closely spaced pn regions (0.8 μm) on a Ge region with short length (5-20 μm) and narrow width (2.4 μm). Though with a thin Ge layer (∼220 nm including bottom SiGe buffer), light is evanescent-coupled from the Si waveguide effectively to the overlying Ge detector. The device exhibits f3 db bandwidth of 18 GHz with external responsivity of 0.13 A/W for 1550 nm at -1 V. Considering the coupling loss and waveguide loss, the internal responsivity is as high as 0.65 A/W. It is shown that with increasing detector length, the devices' internal quantum efficiency can be improved to ∼90% and by suppressing parasitic effects, speed can be boosted further towards several tens of gigahertz. © 2008 IEEE.|
|Source Title:||IEEE Photonics Technology Letters|
|Appears in Collections:||Staff Publications|
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