Please use this identifier to cite or link to this item:
|Title:||Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform|
|Citation:||Ang, K.-W., Liow, T.-Y., Yu, M.-B., Fang, Q., Song, J., Lo, G.-Q., Kwong, D.-L. (2010-01). Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform. IEEE Journal on Selected Topics in Quantum Electronics 16 (1) : 106-113. ScholarBank@NUS Repository. https://doi.org/10.1109/JSTQE.2009.2025142|
|Abstract:||The design and fabrication of a monolithically integrated evanescent-coupled Ge-on-silicon-on-insulator (SOI) photodetector and CMOS circuits were realized on common SOI platform using an electronic-first and photonic-last integration approach. High-performance detector with an integrated Si waveguide was demonstrated on epitaxial Ge-absorbing layer selectively grown on an ultrathin SOI substrate. Performance metrics of photodetector designs featuring vertical and lateral PIN configurations were investigated. When operated at a bias of 1.0 V, a vertical PIN detector achieved a lower I-dark of 0.57 A as compared to a lateral PIN detector, a value that is below the typical $\sim$ 1 $\mu$A upper limit acceptable for high-speed-receiver design. Very high responsivity of $\sim$0.92 A/W was obtained in both detector designs for a wavelength of 1550 nm, which corresponds to a quantum efficiency of ∼73%. Impulse response measurements showed that the vertical PIN detector gives rise to a smaller full-width at half-maximum of ∼ 24.4 ps over a lateral PIN detector, which corresponds to a 3 dB bandwidth of ∼11.3 GHz. RC time delay is shown to be the dominant factor limiting the speed performance. Eye patterns (pseudorandom binary sequence 27-1) measurement further confirms the achievement of high-speed and low-noise photodetection at a bit rate of 8.5 Gb/s. Excellent transfer and output characteristics have also been achieved by the integrated CMOS inverter circuits in addition to the well-behaved logic functions. The introduction of an additional thermal budget (800 °C) arising from the Ge epitaxy growth has no observable detrimental impact on the short-channel control of the CMOS inverter circuit. In addition, we describe the issues associated with monolithic integration and discuss the potential of Ge-detector/Si CMOS receiver for future optical communication applications. © 2006 IEEE.|
|Source Title:||IEEE Journal on Selected Topics in Quantum Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 17, 2018
WEB OF SCIENCETM
checked on Aug 29, 2018
checked on Jun 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.