Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3264625
Title: Low temperature metal induced lateral crystallization of Ge using germanide forming metals
Authors: Phung, T.H.
Xie, R.
Tripathy, S.
Yu, M.
Zhu, C. 
Issue Date: 2010
Citation: Phung, T.H., Xie, R., Tripathy, S., Yu, M., Zhu, C. (2010). Low temperature metal induced lateral crystallization of Ge using germanide forming metals. Journal of the Electrochemical Society 157 (2) : H208-H213. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3264625
Abstract: Low temperature (ranging from 350 to 420°C) metal induced lateral crystallization of Ge using germanide forming metals Ni, Co, and Pd is performed. The lateral growth lengths and crystallized Ge films' quality are optimized when annealed at 375°C, above which self-nucleation in Ge hinders the metal induced crystallization process. At 375°C, the sample with Pd as the seed metal has the largest lateral growth length, while the sample using Co as the seed layer exhibits the largest crystal grain size. The experiments suggest that the lateral growth length is associated with the diffusivity of the metal and germanide in Ge, while the crystal quality is related to the lattice mismatch between germanide and Ge. © 2009 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/82629
ISSN: 00134651
DOI: 10.1149/1.3264625
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