Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4792477
Title: Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor
Authors: Ding, Y.
Cheng, R. 
Du, A.
Yeo, Y.-C. 
Issue Date: 21-Feb-2013
Citation: Ding, Y., Cheng, R., Du, A., Yeo, Y.-C. (2013-02-21). Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor. Journal of Applied Physics 113 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4792477
Abstract: The local strain components in the source/drain (S/D) and channel regions of Si fin field-effect transistor (FinFET) structures wrapped around by a Ge2Sb2Te5 liner stressor were investigated for the first time using nano-beam diffraction. When the Ge2Sb 2Te5 (GST) layer changes phase from amorphous to crystalline, it contracts and exerts a large stress on the Si fins. This results in large compressive strain in the S/D region of 1 ̄10-oriented Si FinFETs of up to -1.15% and -1.57% in the 110 (horizontal) and 001 (vertical) directions, respectively. In the channel region of the FinFETs under the metal gate, the GST contraction results in up to -1.47% and -0.61% compressive strain in the 110 and 001 directions, respectively. In the channel region, the 110 compressive strain is higher at the fin sidewalls and lower near the fin center, while the 001 compressive strain is lower at the sidewalls and higher near the center. © 2013 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82613
ISSN: 00218979
DOI: 10.1063/1.4792477
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