Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/82611
Title: Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
Authors: Chim, W.K. 
Lim, P.S.
Keywords: Electrostatic discharge
Flicker noise
Hot carrier
Interface state
Latent damage
Oxide trap charge
Silicon dioxide
Issue Date: Dec-2001
Citation: Chim, W.K.,Lim, P.S. (2001-12). Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (12) : 6770-6777. ScholarBank@NUS Repository.
Abstract: Latent damage generation in thin oxides of metal-oxide-semiconductor (MOS) devices, caused by high-field impulse or electrostatic discharge (ESD) stress applied to the gate electrode, can lead to increased trap generation during subsequent hot-carrier stressing. However, the charge-to-breakdown (Qbd) of such impulse prestressed devices is not significantly affected by the latent damage, and hence it is difficult to characterize such damage using Qbd measurements. Monitoring of the latent damage can be carried out by detecting the change in an appropriate electrical parameter of the device or by extracting the generated interface states and oxide trap charges. However, such electrical measurements have their own limitations. It was found that low-frequency noise measurement is a more sensitive method than the above-mentioned electrical measurements for characterizing the ESD stress-induced latent damage in thin oxides.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/82611
ISSN: 00214922
Appears in Collections:Staff Publications

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