Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2198507
Title: Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistors
Authors: Liu, C.
Chor, E.F. 
Tan, L.S. 
Issue Date: 2006
Citation: Liu, C., Chor, E.F., Tan, L.S. (2006). Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistors. Applied Physics Letters 88 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2198507
Abstract: We report the studies of AlGaNGaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using reactive-sputtered HfO2 as the gate dielectric and the surface passivation layer. X-ray photoemission method reveals a conduction-band offset of 1.71 eV for the HfO2 GaN heterostructure. The dielectric constant of HfO2 is estimated to be 21 by capacitance-voltage measurements. MOS-HEMTs with a 1.5-μm -long gate exhibit a maximum drain current of 830 mAmm and a peak transconductance of 115 mSmm, while the gate leakage current is at least five orders of magnitude lower than that of the reference HEMTs. Good surface passivation effects of HfO 2 have also been confirmed by pulsed gate measurements, with MOS-HEMTs showing a significant drain current recovery from current collapse observed in HEMTs. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82583
ISSN: 00036951
DOI: 10.1063/1.2198507
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