Please use this identifier to cite or link to this item:
Title: Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistors
Authors: Liu, C.
Chor, E.F. 
Tan, L.S. 
Issue Date: 2006
Citation: Liu, C., Chor, E.F., Tan, L.S. (2006). Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistors. Applied Physics Letters 88 (17) : -. ScholarBank@NUS Repository.
Abstract: We report the studies of AlGaNGaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using reactive-sputtered HfO2 as the gate dielectric and the surface passivation layer. X-ray photoemission method reveals a conduction-band offset of 1.71 eV for the HfO2 GaN heterostructure. The dielectric constant of HfO2 is estimated to be 21 by capacitance-voltage measurements. MOS-HEMTs with a 1.5-μm -long gate exhibit a maximum drain current of 830 mAmm and a peak transconductance of 115 mSmm, while the gate leakage current is at least five orders of magnitude lower than that of the reference HEMTs. Good surface passivation effects of HfO 2 have also been confirmed by pulsed gate measurements, with MOS-HEMTs showing a significant drain current recovery from current collapse observed in HEMTs. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.2198507
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jul 17, 2018


checked on Jun 27, 2018

Page view(s)

checked on May 11, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.