Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2001766
Title: Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
Authors: Lin, J.Q.
Lee, S.J. 
Oh, H.J. 
Lo, G.Q.
Kwong, D.L.
Chi, D.Z.
Keywords: Dopant activation
InGaAs
MOSFETs
Self-aligned
Issue Date: 2008
Citation: Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z. (2008). Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate. IEEE Electron Device Letters 29 (9) : 977-980. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001766
Abstract: A high-performance In0.53Ga0.47As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH4)2S treatment, the chemical vapor deposition HfAlO growth on In0.53Ga0.47As exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 nm shows a gate leakage current density as low as 2.5 × 10-7A/cm2 at Vg of 1 V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600 °C for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an In0.53Ga0.47As nMOSFET shows well-performed Id-Vd and Id-Vg characteristics. The record high peak electron mobility of 1560 cm2Vs has been achieved without any correction methods considering interface charge and parasitic resistance. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82566
ISSN: 07413106
DOI: 10.1109/LED.2008.2001766
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

38
checked on Sep 22, 2018

WEB OF SCIENCETM
Citations

35
checked on Sep 12, 2018

Page view(s)

16
checked on Feb 25, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.