Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1618071
Title: Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition
Authors: Yeo, C.C.
Cho, B.J. 
Joo, M.S. 
Whoang, S.J.
Kwong, D.L.
Bera, L.K.
Mathew, S.
Balasubramanian, N.
Issue Date: Nov-2003
Citation: Yeo, C.C., Cho, B.J., Joo, M.S., Whoang, S.J., Kwong, D.L., Bera, L.K., Mathew, S., Balasubramanian, N. (2003-11). Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition. Electrochemical and Solid-State Letters 6 (11) : F42-F44. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1618071
Abstract: A multistep metallorganic chemical vapor deposition (MOCVD) technique of HfO2 gate dielectric and its electrical properties are reported. This technique involves steps of "deposition followed by postdeposition annealing" of HfO2 in which each step is repeated on the previously deposited and annealed HfO2. Our experiment demonstrates significant reduction of gate leakage current after high-temperature annealing for HfO2 deposited using a multistep deposition technique as compared to conventional single-step deposition. This improvement is attributed to offset of the grain boundaries and pinholes from one layer to another in a multistep deposited HfO2 which eventually leads to blockage of leakage current path. © 2003 The Electrochemical Society. All rights reserved.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82508
ISSN: 10990062
DOI: 10.1149/1.1618071
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