Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1429799
Title: Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling
Authors: Chim, W.K. 
Lim, P.S.
Issue Date: 1-Feb-2002
Citation: Chim, W.K., Lim, P.S. (2002-02-01). Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling. Journal of Applied Physics 91 (3) : 1577-1588. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1429799
Abstract: This article presents a detailed investigation on the stress-induced leakage current (SILC) conduction mechanism via conduction-band electron (CBE) and valence-band electron (VBE) tunneling in thin oxides. An improved SILC model that is able to reproduce the experimental SILC over a wide range of oxide fields, and yet give a realistic level of extracted neutral trap concentration, is proposed. Calculations performed with the improved SILC model suggest that SILC conduction via neutral traps is accompanied by energy relaxation (i.e., an inelastic mechanism), irrespective of the origin (i.e., whether CBE or VBE) of the tunneling species. For both CBE and VBE tunneling, inelastic tunneling with energy relaxation (E relax) of 1.5 and 0.8 eV, was found to fit the experimental measurements well. These values of E relax agree with those reported in the literature. © 2002 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82507
ISSN: 00218979
DOI: 10.1063/1.1429799
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