Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.886708
Title: I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
Authors: Toh, E.-H.
Wang, G.H.
Chan, L.
Lo, G.-Q.
Samudra, G. 
Yeo, Y.-C. 
Keywords: Impact ionization
Impact-ionization MOS (I-MOS)
Silicon-germanium
Subthreshold swing
Issue Date: Dec-2006
Citation: Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2006-12). I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering. IEEE Electron Device Letters 27 (12) : 975-977. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.886708
Abstract: An impact-ionization MOS (I-MOS) transistor with an elevated impact-ionization region (I-region) and excellent subthreshold swing of 3.2 mV/dec at room temperature is demonstrated. An elevated Si 0.75Ge0.25 region is integrated and employed to engineer the bandgap and impact-ionization rate in the I-region. Compared to a device with a Si I-region, an I-MOS device with a Si0.75Ge0.25 I-region shows significantly enhanced performance due to the smaller bandgap of the I-region and the enhanced impact-ionization rate. For the I-MOS device with a Si0.75 Ge0.25 I-region, the breakdown voltage is also reduced, and a significant drive current enhancement is achieved at VG-VT=1 V and a gate length of 80 nm. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82494
ISSN: 07413106
DOI: 10.1109/LED.2006.886708
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