High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films

Abstract

Thermal stability and strain relaxation temperature of strained Si 0.91Ge 0.09 layer has been investigated using double crystal x-ray diffraction (DCXRD). High quality gate oxynitride layers rapid thermally grown on strained Si 0.91Ge 0.09 using N 2O and split N 2O cycle technique below strained relaxed temperature is reported. A positive fixed oxide charge density was observed for N 2O and split-N 2O grown films. The O 2 grown films exhibit a negative fixed oxide charge. The excellent improvements in the leakage current, breakdown field and charge-to-breakdown value of the N 2O or split-N 2O grown films were achieved compared to pure O 2 grown films.