Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.936352
Title: High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
Authors: Bera, L.K. 
Choi, W.K. 
Tan, C.S.
Samanta, S.K.
Maiti, C.K.
Keywords: Gate oxide integrity
Oxide reliability
SiGe oxide
Issue Date: Aug-2001
Citation: Bera, L.K., Choi, W.K., Tan, C.S., Samanta, S.K., Maiti, C.K. (2001-08). High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films. IEEE Electron Device Letters 22 (8) : 387-389. ScholarBank@NUS Repository. https://doi.org/10.1109/55.936352
Abstract: Thermal stability and strain relaxation temperature of strained Si 0.91Ge 0.09 layer has been investigated using double crystal x-ray diffraction (DCXRD). High quality gate oxynitride layers rapid thermally grown on strained Si 0.91Ge 0.09 using N 2O and split N 2O cycle technique below strained relaxed temperature is reported. A positive fixed oxide charge density was observed for N 2O and split-N 2O grown films. The O 2 grown films exhibit a negative fixed oxide charge. The excellent improvements in the leakage current, breakdown field and charge-to-breakdown value of the N 2O or split-N 2O grown films were achieved compared to pure O 2 grown films.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82454
ISSN: 07413106
DOI: 10.1109/55.936352
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Jul 14, 2018

WEB OF SCIENCETM
Citations

5
checked on Jun 18, 2018

Page view(s)

36
checked on Jun 29, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.