Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.085112jes
Title: High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applications
Authors: Phung, T.H.
Srinivasan, D.K.
Steinmann, P.
Wise, R.
Yu, M.-B.
Yeo, Y.-C. 
Zhu, C. 
Issue Date: 2011
Citation: Phung, T.H., Srinivasan, D.K., Steinmann, P., Wise, R., Yu, M.-B., Yeo, Y.-C., Zhu, C. (2011). High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applications. Journal of the Electrochemical Society 158 (12) : H1289-H1292. ScholarBank@NUS Repository. https://doi.org/10.1149/2.085112jes
Abstract: MIM capacitors for RF applications with sputtered Er2O 3 on ALD SiO2 stacked dielectrics with excellent capacitance performance were demonstrated for the first time. An MIM capacitor with 8.8 nm Er2O3 on 3 nm SiO2 stacked dielectrics displayed a high capacitance density of 7 fFm2+, a low quadratic VCC of less than 100 ppmV2+, a low leakage current at 3.3 V bias of 1 10-8 Acm2+, and a high dielectric field strength of 8.7 MVcm. Having leakage currents of 1 10-7 and 4 10 -8 Acm2+ at 3.3 and 2 V, respectively, the MIM capacitor with 7 nm Er2O3 on 3 nm SiO2 stacked dielectrics demonstrated a capacitance density of 7.4 fFm2+ and quadratic VCCs of -91 and -255 ppmV2+ at 10 and 100 kHz, respectively. The low quadratic VCC was obtained by compensating the positive of Er2O3 with the negative of SiO2, while the low leakage current and high oxide field strength demonstrated were due to the high quality SiO2 deposited by the ALD method. © 2011 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/82452
ISSN: 00134651
DOI: 10.1149/2.085112jes
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