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|Title:||Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms|
|Source:||Huang, J.Q.,Chiam, S.Y.,Chim, W.K.,Wong, L.M.,Wang, S.J. (2009). Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms. Nanotechnology 20 (42) : -. ScholarBank@NUS Repository. https://doi.org/42/425604|
|Abstract:||We report on a method to fabricate one-dimensional heterostructures of germanium nanowires (GeNWs) and germanium-silicon oxide nanotubes (GeSiO xNTs). The synthesis of the wire-tube heterostructures is carried out using a simple furnace set-up with germanium tetraiodide and germanium powders as growth precursors, gold-dotted silicon wafers as substrates and by controlling the temperature ramp rate/sequence of the growth precursors. Two types of wire-tube heterostructures resulting from distinct growth mechanisms are obtained. The type-1 heterostructure consists of a GeNW, grown via a gold-catalyzed vapour-liquid-solid process, at the lower end and a GeSiO xNT at the upper end. In contrast, the type-2 heterostructure is made up of a solid wire at the upper end and a hollow tube at the lower end. The solid wire portion of the type-2 heterostructure is formed through an oxide-assisted growth process. © 2009 IOP Publishing Ltd.|
|Appears in Collections:||Staff Publications|
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