Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/20/42/425604
Title: Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms
Authors: Huang, J.Q.
Chiam, S.Y.
Chim, W.K. 
Wong, L.M.
Wang, S.J.
Issue Date: 2009
Citation: Huang, J.Q., Chiam, S.Y., Chim, W.K., Wong, L.M., Wang, S.J. (2009). Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms. Nanotechnology 20 (42) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/20/42/425604
Abstract: We report on a method to fabricate one-dimensional heterostructures of germanium nanowires (GeNWs) and germanium-silicon oxide nanotubes (GeSiO xNTs). The synthesis of the wire-tube heterostructures is carried out using a simple furnace set-up with germanium tetraiodide and germanium powders as growth precursors, gold-dotted silicon wafers as substrates and by controlling the temperature ramp rate/sequence of the growth precursors. Two types of wire-tube heterostructures resulting from distinct growth mechanisms are obtained. The type-1 heterostructure consists of a GeNW, grown via a gold-catalyzed vapour-liquid-solid process, at the lower end and a GeSiO xNT at the upper end. In contrast, the type-2 heterostructure is made up of a solid wire at the upper end and a hollow tube at the lower end. The solid wire portion of the type-2 heterostructure is formed through an oxide-assisted growth process. © 2009 IOP Publishing Ltd.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/82445
ISSN: 09574484
DOI: 10.1088/0957-4484/20/42/425604
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