Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-004-2893-6
Title: Growth of β-Ga 2O 3 nanoparticles by pulsed laser ablation technique
Authors: Lam, H.M.
Hong, M.H. 
Yuan, S.
Chong, T.C. 
Issue Date: Dec-2004
Citation: Lam, H.M., Hong, M.H., Yuan, S., Chong, T.C. (2004-12). Growth of β-Ga 2O 3 nanoparticles by pulsed laser ablation technique. Applied Physics A: Materials Science and Processing 79 (8) : 2099-2102. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-004-2893-6
Abstract: This work investigates pulsed laser ablation for Ga 2O 3 nanoparticles. Nanoparticles with diameters of 10 to 500 nm were deposited on silicon substrates in large quantities, by KrF excimer laser ablation of a GaN (99.99% purity) target in high purity nitrogen (99.9995%) background gas at room temperature, without a catalyst. The particle size and phase structure of the as-deposited nanoparticles are examined by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), and selected-area electron diffraction (SAD). FE-SEM images show that the nanoparticles aggregate to form micron-size nanoclusters at chamber pressures of 1 and 5 Torr. On the other hand, nanoparticles aggregate with chain-like nanostructures, are synthesized at high chamber pressures (≥ 10 Torr). TEM images further reveal that chain-like nanostructures are formed by the aggregation of individual spherical and ellipsoidal nanoparticles. Photoluminescence measurement shows stable and broad blue emission at 445 nm.
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/82436
ISSN: 09478396
DOI: 10.1007/s00339-004-2893-6
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