Growth of CrTe thin films by molecular-beam epitaxy
Sreenivasan, M.G. Hou, X.J. Teo, K.L. Jalil, M.B.A. Liew, T. Chong, T.C.
Sreenivasan, M.G.
Hou, X.J.
Chong, T.C.
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Alternative Title
Abstract
We report the growth of Cr1-δTe films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr1-δTe can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature. © 2005 Elsevier B.V. All rights reserved.
Keywords
CrTe, Ferromagnetic, Molecular-beam epitaxy
Source Title
Thin Solid Films
Publisher
Series/Report No.
Collections
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Date
2006-05-18
DOI
10.1016/j.tsf.2005.10.027
Type
Article