Please use this identifier to cite or link to this item:
|Title:||Growth of CrTe thin films by molecular-beam epitaxy|
|Citation:||Sreenivasan, M.G., Hou, X.J., Teo, K.L., Jalil, M.B.A., Liew, T., Chong, T.C. (2006-05-18). Growth of CrTe thin films by molecular-beam epitaxy. Thin Solid Films 505 (1-2) : 133-136. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.027|
|Abstract:||We report the growth of Cr1-δTe films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr1-δTe can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 17, 2018
WEB OF SCIENCETM
checked on Oct 9, 2018
checked on Jul 27, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.