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Title: Growth of CrTe thin films by molecular-beam epitaxy
Authors: Sreenivasan, M.G.
Hou, X.J.
Teo, K.L. 
Jalil, M.B.A. 
Liew, T. 
Chong, T.C.
Keywords: CrTe
Molecular-beam epitaxy
Issue Date: 18-May-2006
Citation: Sreenivasan, M.G., Hou, X.J., Teo, K.L., Jalil, M.B.A., Liew, T., Chong, T.C. (2006-05-18). Growth of CrTe thin films by molecular-beam epitaxy. Thin Solid Films 505 (1-2) : 133-136. ScholarBank@NUS Repository.
Abstract: We report the growth of Cr1-δTe films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr1-δTe can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.10.027
Appears in Collections:Staff Publications

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