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|Title:||Growth of CrTe thin films by molecular-beam epitaxy||Authors:||Sreenivasan, M.G.
|Issue Date:||18-May-2006||Citation:||Sreenivasan, M.G., Hou, X.J., Teo, K.L., Jalil, M.B.A., Liew, T., Chong, T.C. (2006-05-18). Growth of CrTe thin films by molecular-beam epitaxy. Thin Solid Films 505 (1-2) : 133-136. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.027||Abstract:||We report the growth of Cr1-δTe films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr1-δTe can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature. © 2005 Elsevier B.V. All rights reserved.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/82432||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.10.027|
|Appears in Collections:||Staff Publications|
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