Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3139776
Title: GeTe/Sb7Te3 superlatticelike structure for lateral phase change memory
Authors: Yang, H.
Chong, C.T. 
Zhao, R.
Lee, H.K.
Li, J.
Lim, K.G.
Shi, L.
Issue Date: 2009
Citation: Yang, H., Chong, C.T., Zhao, R., Lee, H.K., Li, J., Lim, K.G., Shi, L. (2009). GeTe/Sb7Te3 superlatticelike structure for lateral phase change memory. Applied Physics Letters 94 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3139776
Abstract: A series of superlatticelike (SLL) structure incorporated with two phase-change materials GeTe and Sb7 Te3 was applied in lateral phase change memory. Power consumption and lifetime were used as two criteria to optimize the SLL structure. It was found that with the thickness ratio of GeTe to Sb 7Te3 at 1.6, the RESET current could be as low as 1.5 mA and the endurance could reach as high as 5.3× 106 cycles. By varying the thickness ratio of GeTe to Sb7Te3, the crystallization temperature of SLL structures and the performance of lateral phase change memory with these SLL structures can be controlled. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82419
ISSN: 00036951
DOI: 10.1063/1.3139776
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