Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2212871
Title: Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
Authors: Wang, L.
Su, S.
Wang, W.
Yang, Y.
Tong, Y.
Liu, B.
Guo, P.
Gong, X.
Zhang, G.
Xue, C.
Cheng, B.
Han, G. 
Yeo, Y.-C. 
Keywords: Dopant activation
GeSn
n + junction
Issue Date: 2012
Citation: Wang, L., Su, S., Wang, W., Yang, Y., Tong, Y., Liu, B., Guo, P., Gong, X., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C. (2012). Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal. IEEE Electron Device Letters 33 (11) : 1529-1531. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2212871
Abstract: A Ge 0.976 Sn 0.024 n +/p diode was formed using phosphorus ion P + implant and rapid thermal annealing at 400 °C. Activation of P in Ge typically requires high temperatures (e.g., 700 °C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm 2 at-1 V is achieved for the Ge 0.976 Sn 0.024n +/diode. This is four times higher than that of the Ge n +/p control diode, which received the same P + implant but activated at 700 °C. The n +-GeSn region has a high active dopant concentration of 2.1 × \10 19cm -3, much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n +-GeSn and increases the forward bias diode current. Enhancement of P activation in Ge 0.976 Sn 0.024 could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms. © 2012 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82416
ISSN: 07413106
DOI: 10.1109/LED.2012.2212871
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