Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.832527
Title: Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
Authors: Yu, D.S.
Chiang, K.C.
Cheng, C.F.
Chin, A.
Zhu, C. 
Li, M.F. 
Kwong, D.-L.
Issue Date: Aug-2004
Citation: Yu, D.S., Chiang, K.C., Cheng, C.F., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L. (2004-08). Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility. IEEE Electron Device Letters 25 (8) : 559-561. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.832527
Abstract: We have integrated the low work function NiSi:Hf gate on high-κ LaAlO3 and on smart-cut Ge-on-insulator (SC-GOI) n-MOSFETs. At 1.4-nm equivalent oxide thickness, the NiSi:Hf-LaAlO3/SC-GOI n-MOSFET has comparable gate leakage current with the control Al gate on LaAlO3-Si MOSFETs that is ∼5 orders of magnitude lower than SiO2. In addition, the LaAlO3/SC-GOI n-MOSFET with a metal-like fully NiSi:Hf gate has high peak electron mobility of 398 cm2/Vs and 1.7 times higher than LaAlO3-Si devices. © 2004 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82392
ISSN: 07413106
DOI: 10.1109/LED.2004.832527
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