Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3514242

Title:	Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal
Authors:	Lim, P.S.Y. Chi, D.Z. Lim, P.C. Wang, X.C. Chan, T.K. Osipowicz, T. Yeo, Y.-C.
Issue Date:	1-Nov-2010
Citation:	Lim, P.S.Y., Chi, D.Z., Lim, P.C., Wang, X.C., Chan, T.K., Osipowicz, T., Yeo, Y.-C. (2010-11-01). Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal. Applied Physics Letters 97 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3514242
Abstract:	Epitaxial nickel digermanide (NiGe2), a metastable phase, was formed by laser annealing Ni on (100) germanium-on-silicon substrates. The NiGe2 formation was investigated using transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and first-principles calculations. The formation mechanism of NiGe2 is discussed and is attributed to both the reduced interfacial energy at the NiGe2 /Ge (100) interface and the kinetic aspects of the laser annealing reaction associated with phase transformation and film agglomeration. © 2010 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82373
ISSN:	00036951
DOI:	10.1063/1.3514242
Appears in Collections:	Staff Publications

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