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|Title:||Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs|
|Citation:||Chin, H.-C., Gong, X., Wang, L., Yeo, Y.-C. (2010). Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs. Electrochemical and Solid-State Letters 13 (12) : H440-H442. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3489073|
|Abstract:||A study of fluorine (F) treatment on the electrical characteristics of In0.53 Ga0.47 As channel n-channel metal-oxide- semiconductor field effect transistors (n-MOSFETs) with metallorganic chemical vapor deposited HfAlO gate dielectric and silane and ammonia (SiH4 + NH3) passivation is reported. X-ray photoelectron spectroscopy and secondary-ion mass spectrometry confirm the incorporation of F in the HfAlO gate dielectric after CF4 plasma treatment. F was segregated near the high-k/InGaAs interface after postdeposition anneal. By introducing F treatment, further improvement in the subthreshold characteristics and hysteresis of the SiH4 + NH3-passivated InGaAs MOSFETs was achieved, indicating a reduction in interface and bulk oxide trapped charges. The F-treated InGaAs MOSFETs demonstrated a significant improvement in drive current and effective carrier mobility, as compared to the control devices. © 2010 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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