Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3489073
Title: Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs
Authors: Chin, H.-C.
Gong, X.
Wang, L.
Yeo, Y.-C. 
Issue Date: 2010
Citation: Chin, H.-C., Gong, X., Wang, L., Yeo, Y.-C. (2010). Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs. Electrochemical and Solid-State Letters 13 (12) : H440-H442. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3489073
Abstract: A study of fluorine (F) treatment on the electrical characteristics of In0.53 Ga0.47 As channel n-channel metal-oxide- semiconductor field effect transistors (n-MOSFETs) with metallorganic chemical vapor deposited HfAlO gate dielectric and silane and ammonia (SiH4 + NH3) passivation is reported. X-ray photoelectron spectroscopy and secondary-ion mass spectrometry confirm the incorporation of F in the HfAlO gate dielectric after CF4 plasma treatment. F was segregated near the high-k/InGaAs interface after postdeposition anneal. By introducing F treatment, further improvement in the subthreshold characteristics and hysteresis of the SiH4 + NH3-passivated InGaAs MOSFETs was achieved, indicating a reduction in interface and bulk oxide trapped charges. The F-treated InGaAs MOSFETs demonstrated a significant improvement in drive current and effective carrier mobility, as compared to the control devices. © 2010 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82371
ISSN: 10990062
DOI: 10.1149/1.3489073
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

10
checked on Sep 19, 2018

WEB OF SCIENCETM
Citations

9
checked on Sep 19, 2018

Page view(s)

33
checked on Sep 7, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.