Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4856796

Title:	Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors
Authors:	Heinrich, M. Kluska, S. Hameiri, Z. Hoex, B. Aberle, A.G.
Issue Date:	23-Dec-2013
Citation:	Heinrich, M., Kluska, S., Hameiri, Z., Hoex, B., Aberle, A.G. (2013-12-23). Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors. Applied Physics Letters 103 (26) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4856796
Abstract:	We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes. © 2013 AIP Publishing LLC.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82327
ISSN:	00036951
DOI:	10.1063/1.4856796
Appears in Collections:	Staff Publications

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