Please use this identifier to cite or link to this item:
|Title:||Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET|
Negative-bias temperature instability (NBTI)
|Citation:||Ang, D.S., Wang, S., Ling, C.H. (2005-12). Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET. IEEE Electron Device Letters 26 (12) : 906-908. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859673|
|Abstract:||A detailed investigation of the negative-bias temperature instability (NBTI) of the ultrathin nitrided gate p-MOSFET over a wide temperature range reveals two different activation energies, indicating the coexistence of two distinct degradation mechanisms. One mechanism is linked to the incorporation of nitrogen while the other is the classical mechanism responsible for the degradation of conventional SiO2 gate devices. Eliminating the contribution of the former consistently yields an Arrhenius plot that matches excellently with that obtained through direct measurement of SiO2 gate devices. This finding shows that heavy nitridation or, in the extreme case, the adoption of Si3N4/SiOx gate stack does not change the nature of the classical NBTI mechanism but introduces a new degradation mechanism of an order-of-magnitude lower activation energy, which dominates over typical operating temperature range. This new mechanism is related to the spontaneous trapping of positive charges at nitrogen-related precursor sites near the Si-SiO2 interface. © 2005 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 19, 2018
WEB OF SCIENCETM
checked on Apr 3, 2018
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.