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|Title:||Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices|
|Citation:||Bliznetsov, V., Singh, N., Kumar, R., Balasubramanian, N., Guo, P., Lee, S.J., Cai, Y. (2008). Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26 (4) : 1440-1444. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2953732|
|Abstract:||This article presents results of study and optimization of plasma etching of TiN and TiN-TaN gates for sub-45 mm CMOS technology. By design of experiment in decoupled plasma source using HBr/Cl2 plasma, etching parameters were established providing smooth post-etch surface. © 2008 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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