Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2953732

Title:	Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices
Authors:	Bliznetsov, V. Singh, N. Kumar, R. Balasubramanian, N. Guo, P. Lee, S.J. Cai, Y.
Issue Date:	2008
Citation:	Bliznetsov, V., Singh, N., Kumar, R., Balasubramanian, N., Guo, P., Lee, S.J., Cai, Y. (2008). Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26 (4) : 1440-1444. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2953732
Abstract:	This article presents results of study and optimization of plasma etching of TiN and TiN-TaN gates for sub-45 mm CMOS technology. By design of experiment in decoupled plasma source using HBr/Cl2 plasma, etching parameters were established providing smooth post-etch surface. © 2008 American Vacuum Society.
Source Title:	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI:	http://scholarbank.nus.edu.sg/handle/10635/82300
ISSN:	10711023
DOI:	10.1116/1.2953732
Appears in Collections:	Staff Publications

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