Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2029125
Title: Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
Authors: Wang, J. 
Zang, H.
Yu, M.B.
Xiong, Y.Z.
Lo, G.Q.
Kwong, D.L.
Lee, S.J. 
Keywords: Germanium
Junction field-effect transistor (JFET)
Photodetector
Issue Date: Oct-2009
Citation: Wang, J., Zang, H., Yu, M.B., Xiong, Y.Z., Lo, G.Q., Kwong, D.L., Lee, S.J. (2009-10). Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition. IEEE Electron Device Letters 30 (10) : 1066-1068. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2029125
Abstract: In this letter, we demonstrate a scalable (with gate length of 1 μm) Ge photodetector based on a junction field-effecttransistor (JFET) structure with high sensitivity and improved response time. To overcome the low-detection-efficiency issue of typical JFET photodetectors, a high-quality Ge epilayer, as the gate of JFET, was achieved using a novel epigrowth technique. By laser surface illumination of 3 mW on the Ge gate, an ION/I OFF ratio up to 185 was achieved at a wavelength of 1550 nm for the first time. In addition, the device shows a temporal response time of 110 ps with a rise time of 10 ps, indicating that the scalable Ge JFET photodetector is a promising candidate to replace large-size photodiodes in future optoelectronic integrated circuits and as an image sensor integrated with a CMOS circuit for its comparable size in respect to modern MOSFETs. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82288
ISSN: 07413106
DOI: 10.1109/LED.2009.2029125
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