Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/22/5/011
Title: Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide
Authors: Liu, C.
Chor, E.F. 
Tan, L.S. 
Issue Date: 1-May-2007
Citation: Liu, C., Chor, E.F., Tan, L.S. (2007-05-01). Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide. Semiconductor Science and Technology 22 (5) : 522-527. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/22/5/011
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) using HfO2 as a surface passivation layer and metal-oxide-semiconductor HEMTs (MOS-HEMTs) using HfO2 as gate oxide have been investigated and compared with the regular HEMTs. In MOS-HEMTs, the HfO2 gate dielectric is also used for passivation simultaneously. Our measurements have shown that both passivated HEMTs and MOS-HEMTs outperformed the regular HEMTs in dc, high-frequency and pulsed-mode operations, with MOS-HEMTs exhibiting the best characteristics, including the highest drain current, the lowest gate leakage current, the largest gate voltage swing, the highest cut-off frequencies and the best immunity to current collapse. In addition, the decrease in transconductance of MOS-HEMTs relative to HEMTs is as low as 8.7%, most probably a consequence of the high-k value of HfO2. Our results thus indicate the great potential of HfO2/AlGaN/GaN MOS-HEMTs for high-frequency and high-power applications. © 2007 IOP Publishing Ltd.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/82283
ISSN: 02681242
DOI: 10.1088/0268-1242/22/5/011
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