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|Title:||Embedding nano-pillar arrays into InGaN light-emitting diodes|
|Citation:||Li, K.H., Zang, K.Y., Chua, S.J., Choi, H.W. (2014). Embedding nano-pillar arrays into InGaN light-emitting diodes. Physica Status Solidi (C) Current Topics in Solid State Physics 11 (3-4) : 742-745. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.201300536|
|Abstract:||The embedded nano-pillar light-emitting diodes are fabricated via nanosphere lithography in combination with epitaxial lateral overgrowth method, followed by standard micro-fabrication process. Apart from output power enhancement due to diffraction and scattering effect from the embedded nano-pillars, the device is demonstrated to have insignificant spectral blue shift with increasing injection currents, which is dependent on the built-in piezoelectric field that is partially suppressed by strain relaxation of nanostructured quantum wells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Source Title:||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Appears in Collections:||Staff Publications|
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