Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssc.201300536
Title: Embedding nano-pillar arrays into InGaN light-emitting diodes
Authors: Li, K.H.
Zang, K.Y.
Chua, S.J. 
Choi, H.W.
Keywords: InGaN
Light-emitting diodes
Nanostructures
Issue Date: 2014
Citation: Li, K.H., Zang, K.Y., Chua, S.J., Choi, H.W. (2014). Embedding nano-pillar arrays into InGaN light-emitting diodes. Physica Status Solidi (C) Current Topics in Solid State Physics 11 (3-4) : 742-745. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.201300536
Abstract: The embedded nano-pillar light-emitting diodes are fabricated via nanosphere lithography in combination with epitaxial lateral overgrowth method, followed by standard micro-fabrication process. Apart from output power enhancement due to diffraction and scattering effect from the embedded nano-pillars, the device is demonstrated to have insignificant spectral blue shift with increasing injection currents, which is dependent on the built-in piezoelectric field that is partially suppressed by strain relaxation of nanostructured quantum wells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi (C) Current Topics in Solid State Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82275
ISSN: 16101642
DOI: 10.1002/pssc.201300536
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