Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.diamond.2014.03.003
Title: Electrical transport properties of polycrystalline CVD graphene on SiO 2/Si substrate
Authors: Kumari, A.
Prasad, N.
Bhatnagar, P.K.
Mathur, P.C.
Yadav, A.K.
Tomy, C.V.
Bhatia, C.S. 
Keywords: Chemical vapor deposition
Electrical properties
Grain boundary characterization
Graphene
Issue Date: May-2014
Citation: Kumari, A., Prasad, N., Bhatnagar, P.K., Mathur, P.C., Yadav, A.K., Tomy, C.V., Bhatia, C.S. (2014-05). Electrical transport properties of polycrystalline CVD graphene on SiO 2/Si substrate. Diamond and Related Materials 45 : 28-33. ScholarBank@NUS Repository. https://doi.org/10.1016/j.diamond.2014.03.003
Abstract: Transport behavior of single layer graphene (SLG) grown by chemical vapor deposition technique on copper foil and transferred to SiO2/Si substrate has been studied by measuring the dc conductivity and Hall mobility in the temperature range 2-460 K. The samples of size 1 × 1 cm2 have been found to be polycrystalline in nature. Raman spectrum has been studied at various locations of the sample and the formation of SLG has been confirmed. From dc conductivity and mobility measurements it has been concluded that the one dimensional grain boundary defects are mainly responsible for the deterioration of mobility and conductivity of charge carriers in the polycrystalline samples. © 2014 Elsevier B.V. All rights reserved.
Source Title: Diamond and Related Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/82254
ISSN: 09259635
DOI: 10.1016/j.diamond.2014.03.003
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