Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/19/22/225203
Title: Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowire
Authors: Yang, W.F.
Lee, S.J. 
Liang, G.C. 
Whang, S.J. 
Kwong, D.L.
Issue Date: 4-Jun-2008
Citation: Yang, W.F., Lee, S.J., Liang, G.C., Whang, S.J., Kwong, D.L. (2008-06-04). Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowire. Nanotechnology 19 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/19/22/225203
Abstract: In this work, we fabricated an Si1-xGex nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si1-xGex NWs integrated with HfO 2 gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si 1-xGex NWs. It is found that both undoped and phosphorus-doped Si1-xGex NW MOSFETs exhibit p-MOS operation while enhanced performance of higher Ion∼100 nA and Ion/Ioff∼105 are achieved from phosphorus-doped Si1-xGex NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142 mV dec-1 was obtained by reducing HfO2 gate dielectric thickness. A comprehensive study on SBH between the Si1-xGex NW channel and Pd source/drain shows that a doped Si1-xGex NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH. © IOP Publishing Ltd.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/82253
ISSN: 09574484
DOI: 10.1088/0957-4484/19/22/225203
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