Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.988812
Title: Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
Authors: Lin, W.H.
Pey, K.L. 
Dong, Z.
Chooi, S.Y.-M.
Zhou, M.S.
Ang, T.C.
Ang, C.H.
Lau, W.S.
Ye, J.H.
Keywords: Dangling bond
Silicon nitride
Time-dependent di-electric breakdown (TDDB)
X-Ray photoelectronic spectroscopy (XPS)
Issue Date: Mar-2002
Citation: Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.-M., Zhou, M.S., Ang, T.C., Ang, C.H., Lau, W.S., Ye, J.H. (2002-03). Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric. IEEE Electron Device Letters 23 (3) : 124-126. ScholarBank@NUS Repository. https://doi.org/10.1109/55.988812
Abstract: Effects of postdeposition anneal of chemical vapor deposited silicon nitride are studied. The Si3N4 films were in situ annealed in either H2(2%)/O2 at 950 °C or N2O at 950 °C in a rapid thermal oxidation system. It is found that an interracial oxide was grown at the Si3N4/Si interface by both postdeposition anneal conditions. This was confirmed by thickness measurement and X-ray photoelectronic spectroscopy (XPS) analysis. The devices with H2 (2%)/O2 anneal exhibit a lower gate leakage current and improved reliability compared to that of N2O anneal. This improvement is attributed to a greater efficiency of generating atomic oxygen in the presence of a small amount of hydrogen, leading to the elimination of structural defects in the as-deposited Si3N4 film by the atomic oxygen. Good drivability is also demonstrated on a 0.12 μm n-MOSFET device.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82235
ISSN: 07413106
DOI: 10.1109/55.988812
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