Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3197144
Title: Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
Authors: Lim, P.S.Y.
Lee, R.T.P. 
Sinha, M.
Chi, D.Z.
Yeo, Y.-C. 
Issue Date: 2009
Citation: Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C. (2009). Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films. Journal of Applied Physics 106 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3197144
Abstract: The effective electron Schottky barrier height (φB N) of nickel silicide (NiSi:C) formed on silicon-carbon (Si 1-yCy or Si:C) films with different substitutional carbon concentrations Csub was investigated. φB N was observed to decrease substantially with an increase in Csub. When C sub is increased from 0% to 1.5%, φB N is reduced by 200 meV. The results of this work could be useful for the reduction in contact resistance between nickel silicide and silicon-carbon source and drain in strained n -channel metal-oxide-semiconductor field-effect transistors. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82212
ISSN: 00218979
DOI: 10.1063/1.3197144
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