Effect of seed layer on the sensitivity of exchange biased planar Hall sensor

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sna.2007.08.015

Title:	Effect of seed layer on the sensitivity of exchange biased planar Hall sensor
Authors:	Chui, K.M. Adeyeye, A.O. Li, M.-H.
Keywords:	Exchange bias Planar Hall effect Seed layer Sensor
Issue Date:	15-Feb-2008
Citation:	Chui, K.M., Adeyeye, A.O., Li, M.-H. (2008-02-15). Effect of seed layer on the sensitivity of exchange biased planar Hall sensor. Sensors and Actuators, A: Physical 141 (2) : 282-287. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sna.2007.08.015
Abstract:	We investigate systematically the effects of seed layer thickness on the sensitivity of exchange biased planar Hall sensors. The sensors consist of Ni80Fe20 (ts)/Fe50Mn50 (20 nm)/Ni80Fe20 (20 nm) trilayers deposited on silicon substrates by sputtering, with ts varied from 0 nm to 50 nm. The sensors are linear near zero-field as a result of the pinning field from the Fe50Mn50 layer. We observed that the sensitivity and range of linearity of the sensors are strongly dependent on the Ni80Fe20 seed layer thickness. The sensitivity of the sensors were also calculated by taking into account the shunting effects of the various metal layers, and the values obtained agree well with the experimental values. © 2007 Elsevier B.V. All rights reserved.
Source Title:	Sensors and Actuators, A: Physical
URI:	http://scholarbank.nus.edu.sg/handle/10635/82209
ISSN:	09244247
DOI:	10.1016/j.sna.2007.08.015
Appears in Collections:	Staff Publications

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