Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics

Abstract

In this paper, we report the electrical characteristics of n- and p-metal oxide semiconductor field effect transistors (MOSFETs) fabricated using a high-quality ultrathin (equivalent oxide thickness ∼11 Å) chemical vapor deposition (CVD) HfO 2 gate stack with a selfaligned dual poly-Si gate process. The CVD HfO 2 gate stack exhibits excellent thermal stability with the poly-Si gate up to 1050°C, after 30 s annealing. Good output MOS characteristics with high drive current capability, excellent subthreshold swings, and good mobility are obtained from both n- and p-MOSFETs.