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|Title:||Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics|
|Authors:||Lee, S. |
|Source:||Lee, S.,Kwong, D.-L. (2003-12). Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (12) : 7256-7258. ScholarBank@NUS Repository.|
|Abstract:||In this paper, we report the electrical characteristics of n- and p-metal oxide semiconductor field effect transistors (MOSFETs) fabricated using a high-quality ultrathin (equivalent oxide thickness ∼11 Å) chemical vapor deposition (CVD) HfO 2 gate stack with a selfaligned dual poly-Si gate process. The CVD HfO 2 gate stack exhibits excellent thermal stability with the poly-Si gate up to 1050°C, after 30 s annealing. Good output MOS characteristics with high drive current capability, excellent subthreshold swings, and good mobility are obtained from both n- and p-MOSFETs.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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