Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/82182
Title: Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
Authors: Lee, S. 
Kwong, D.-L.
Keywords: CVD
Hafnium oxide
High K
Thermal stability
Issue Date: Dec-2003
Source: Lee, S.,Kwong, D.-L. (2003-12). Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (12) : 7256-7258. ScholarBank@NUS Repository.
Abstract: In this paper, we report the electrical characteristics of n- and p-metal oxide semiconductor field effect transistors (MOSFETs) fabricated using a high-quality ultrathin (equivalent oxide thickness ∼11 Å) chemical vapor deposition (CVD) HfO 2 gate stack with a selfaligned dual poly-Si gate process. The CVD HfO 2 gate stack exhibits excellent thermal stability with the poly-Si gate up to 1050°C, after 30 s annealing. Good output MOS characteristics with high drive current capability, excellent subthreshold swings, and good mobility are obtained from both n- and p-MOSFETs.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/82182
ISSN: 00214922
Appears in Collections:Staff Publications

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