Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2073048
Title: Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing
Authors: Poon, C.H.
Tan, L.S. 
Cho, B.J. 
Du, A.Y.
Issue Date: 2005
Source: Poon, C.H., Tan, L.S., Cho, B.J., Du, A.Y. (2005). Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing. Journal of the Electrochemical Society 152 (12) : G895-G899. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2073048
Abstract: The phenomenon of severe dopant loss during rapid thermal annealing of phosphorus-implanted germanium has been investigated. Dopant activation improves for temperatures above 500°C and reaches 100% activation for samples annealed at 600°C. However, a heavily defective junction with approximately 50% dopant loss is recorded. Although surface passivation of the implanted germanium using plasma-enhanced chemical vapor deposited silicon dioxide did not prevent the dose loss, it assisted in the achievement of defect-free, single-crystal germanium with improved electrical characteristics at a reduced thermal budget. Phosphorus introduced into germanium via solid-state diffusion from hosphosilicate glass did not exhibit dose loss upon rapid thermal annealing, suggesting that dose loss could be an effect of implant damage. © 2005 The Electrochemical Society. All rights reserved.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/82168
ISSN: 00134651
DOI: 10.1149/1.2073048
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