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|Title:||Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealing|
|Citation:||Ivana, Foo, Y.L., Zhang, X., Zhou, Q., Pan, J., Kong, E., Owen, M.H.S., Yeo, Y.-C. (2013-01). Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealing. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 31 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.4769266|
|Abstract:||The structural, compositional, and electrical properties of epitaxial Ni4InGaAs2 (denoted as Ni-InGaAs) film formed by annealing sputtered Ni film on InGaAs were investigated. It was found that Ni-InGaAs adopts a NiAs (B8) structure with lattice parameters of a = 0.396 ± 0.002 nm and c = 0.516 ± 0.002 nm, and exhibits an epitaxial relationship with InGaAs, with orientations given by Ni-InGaAs 1 ̄ 10 //InGaAs 001 and Ni-InGaAs//InGaAs. The epitaxial Ni4InGaAs2 film has bulk electrical resistivity of ∼102 μΩ·cm, which increases as the film thickness scales below 10 nm. The results of this work would be useful for the development of contact metallization for high mobility InGaAs metal-oxide-semiconductor field-effect transistors. © 2013 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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