Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2016143
Title: Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
Authors: Wong, H.-S.
Ang, K.-W.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Keywords: Contact resistance
Silicide
Strain
Strained silicon
Issue Date: 2009
Citation: Wong, H.-S., Ang, K.-W., Chan, L., Samudra, G., Yeo, Y.-C. (2009). Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain. IEEE Transactions on Electron Devices 56 (5) : 1128-1134. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2016143
Abstract: We report the integration of a novel selenium segregation (SeS) technology in the silicide contact of strained n-MOSFETs featuring silicon-carbon Si0.99C0.01 source/drain (S/D) stressors. SeS at the NiSi:C/n-Ssi0.99C0.01 interface leads to the achievement of low Schottky barrier height and reduced silicide contact resistance RCSD. At a fixed IOFF of 100 nA μ the improved silicide contact technology employing SeS contributed to a 20% drive current ION enhancement and 30% total series resistance RTotal reduction over control strained devices. The RTotal improvement is primarily due to the reduction of external series resistance REXT, which is due to a reduced RCSD at the NiSi:C/ n- Si0.99C0.01 interface. Comparable DIBL,Tsat and gate leakage density were observed for strained n-MOSFETs with or without the SeS. The impact of introducing Se in the embedded Si0.99C0.01 S/D stressor on tensile stress level in the channel region of strained n-MOSFET was also investigated. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82087
ISSN: 00189383
DOI: 10.1109/TED.2009.2016143
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