Please use this identifier to cite or link to this item:
|Title:||Conductance-voltage measurements on germanium nanocrystal memory structures and effect of gate electric field coupling|
|Citation:||Ng, T.H., Chim, W.K., Choi, W.K. (2006). Conductance-voltage measurements on germanium nanocrystal memory structures and effect of gate electric field coupling. Applied Physics Letters 88 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2186738|
|Abstract:||Conductance-voltage (G-V) analyses were performed on trilayer germanium (Ge) nanocrystal memory capacitor structures, consisting of a high dielectric constant (high-κ) layer (5 nm thick) grown on silicon, a sputtered Ge middle layer (4 nm thick), and a 20 nm thick sputtered cap oxide layer (either SiO2 for moderate gate electric field coupling or HfAlOx for better electric field coupling). Comparisons of the G-V characteristics were performed with a control capacitor sample without nanocrystals. The distinctive characteristics due to nanocrystals could be separated and identified from the interface traps provided the memory structure has sufficiently high electric field coupling from the gate applied voltage, resulting in a large electric field across the tunnel dielectric layer. This work attempts to provide an explanation to the G-V characteristics under the following three conditions: (1) interface trap dominated, (2) nanocrystal dominated, and (3) a combination of effects from both interface traps and nanocrystals. A method for estimating the density of nanocrystals based on the G-V data is also described. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 11, 2018
WEB OF SCIENCETM
checked on Oct 2, 2018
checked on Oct 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.