Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1640455
Title: Coherent and stochastic charge tunneling in ferromagnetic single electron transistors
Authors: Jalil, M.B.A. 
Wang, X.
Issue Date: 15-Feb-2004
Citation: Jalil, M.B.A., Wang, X. (2004-02-15). Coherent and stochastic charge tunneling in ferromagnetic single electron transistors. Journal of Applied Physics 95 (4) : 1878-1883. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1640455
Abstract: A model to calculate the I-V characteristic and tunneling magnetoresistance of a ferromagnetic single electron transistor (FM-SET) is presented. This model incorporates both the sequential stochastic nature of separate tunneling event which transfer discrete charges across the FM-SET, and the coherent tunneling of an individual electron across a barrier. The tunneling resistance Rt of each junction is calculated based on a free electron transmission through a trapezoidal barrier, and a two-band model within the FM electrodes to account for the spin dependence of the transmission coefficients.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82063
ISSN: 00218979
DOI: 10.1063/1.1640455
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