Clarifying the origin of near-infrared electroluminescence peaks for nanocrystalline germanium in metal-insulator-silicon structures

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1793348

Title:	Clarifying the origin of near-infrared electroluminescence peaks for nanocrystalline germanium in metal-insulator-silicon structures
Authors:	Kan, E.W.H. Chim, W.K. Lee, C.H. Choi, W.K. Ng, T.H.
Issue Date:	20-Sep-2004
Citation:	Kan, E.W.H., Chim, W.K., Lee, C.H., Choi, W.K., Ng, T.H. (2004-09-20). Clarifying the origin of near-infrared electroluminescence peaks for nanocrystalline germanium in metal-insulator-silicon structures. Applied Physics Letters 85 (12) : 2349-2351. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1793348
Abstract:	The origin of near-infrared electroluminescence (EL) of nanocrystalline germanium (Ge) embedded in oxide was investigated. It was observed that the nanocrystals were synthesized by partial oxidation of silicon-germanium, Si 0.54Ge0.46 films. It was also observed that the Ge nanocrystals with diameters of 5 and 10 nm exhibited strong luminescence at 1350 nm. The results show that, the luminescence peak was originated from radiative recombination of excitons confined in the nanocrystals.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82056
ISSN:	00036951
DOI:	10.1063/1.1793348
Appears in Collections:	Staff Publications

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