Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2840132
Title: Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs
Authors: Dalapati, G.K.
Sridhara, A.
Wong, A.S.W.
Chia, C.K.
Lee, S.J. 
Chi, D.
Issue Date: 2008
Source: Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D. (2008). Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs. Journal of Applied Physics 103 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2840132
Abstract: Structural and electrical characteristics of sputtered Ti O2 gate dielectric on p-GaAs substrates have been investigated. It has been demonstrated that the introduction of thin aluminum oxynitride (AlON) layer between Ti O2 and p-GaAs improves the interface quality. X-ray photoelectron spectroscopy and transmission electron microscopy results show that the AlON layer effectively suppresses the interfacial oxide formation during thermal treatment. The effective dielectric constant value is 1.5 times higher for the Ti O2 AlON gate stack compared to directly deposited Ti O2 on p-GaAs substrates, with a comparable interface state density. The capacitance-voltage (C-V), current-voltage (I-V) characteristics, and charge trapping behavior of the Ti O2 AlON gate stack under constant voltage stressing exhibit an excellent interface quality and high dielectric reliability, making the films suitable for GaAs based complementary metal-oxide-semiconductor technology. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82046
ISSN: 00218979
DOI: 10.1063/1.2840132
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

36
checked on Feb 28, 2018

WEB OF SCIENCETM
Citations

25
checked on Feb 19, 2018

Page view(s)

28
checked on Apr 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.