Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1392400

Title:	Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
Authors:	Tripathy, S. Ramam, A. Chua, S.J. Pan, J.S. Huan, A.
Issue Date:	Sep-2001
Citation:	Tripathy, S., Ramam, A., Chua, S.J., Pan, J.S., Huan, A. (2001-09). Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 19 (5) : 2522-2532. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1392400
Abstract:	The plasma induced damage of the inductively coupled plasma (ICP) etched surface of n-type gallium nitride (GaN) using Cl2/BCl3 chemistry was investigated. The photoluminiscence (PL) analysis of the etched films was carried out to investigate the plasma induced damage. Change in the intensity of band edge transitions were observed under varying plasma conditions. X-ray photoelectron spectroscopy (XPS) measurements showed that the surface stoichiometry could be used to evaluate the plasma induced damage and real time monitoring of etch products.
Source Title:	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/82042
ISSN:	07342101
DOI:	10.1116/1.1392400
Appears in Collections:	Staff Publications

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